AlGaN/GaN High Electron Mobility Transistors and Diodes Fabricated on Large Area Silicon on poly-SiC (SopSiC) Substrates for Lower Cost and Higher Yield

T. J. Anderson ⁽¹⁾, F. Ren ⁽¹⁾, L. Voss⁽²⁾, M. Hlad ⁽²⁾, B. P. Gila⁽²⁾, S. J. Pearton ⁽²^⁾J.Kim ⁽³⁾, J. Lin ⁽³⁾, P. Bove⁽⁴⁾, H. Lahreche ⁽⁴⁾ , J. Thuret ⁽⁴⁾ and R. Langer ^(4⁾

1. Department of Chemical Engineering, University of Florida, Gainesville, FL
2. Department of Materials Science Engineering, University of Florida, Gainesville, FL
3, Department of Electrical Engineering, University of Florida, Gainesville, FL 32611
4. Picogiga International SAS, Place Marcel Rebuffat, Parc de Villejust, 91971 Courtaboeuf, France

ABSTRACT

The dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly-SiC (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 µm gate-drain spacing was 2.12 V and increased to 3 V at 8 µm spacing. The maximum frequency of oscillation, fMAX, was ~40 GHz for devices with 0.5 µm gate length and 2 µm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm^-1.

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