Recent
Progress of Highly Reliable GaN-HEMT for Mass Production
Fujitsu Laboratories Ltd.
10-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0197,
kikkawa.toshi@jp.fujitsu.com
Phone: +81-46-250-8243
In this paper, we describe the recent progress of highly
reliable GaN high electron mobility transistors (HEMTs) for mass production. We
introduce reliability data of recent GaN-HEMT. There are three phases to
understand the reliability. Yield issues are discussed considering surface hexagonal
pits. Cost is most important issues after reliability is confirmed. Highly
uniform low cost GaN-HEMT using a conductive 3-inch SiC substrate will be
reported. In addition, future base station requires extremely high efficiency, requiring
GaN-HEMT to be used at saturation region. An over 100 W GaN-HEMT using
metal-insulator-semiconductor (MIS) gate is demonstrated to suppress the
forward gate leakage current at saturation region.