Conference

The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2005 On-line Digest Table of Contents

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1.1	Trends and Opportunities for Gallium Arsenide Semiconductors in Handsets	Abstract
1.2	Wide Bandgap Semiconductor Devices and MMIC’s for microwave and Millimeter-Wave Applications: A DARPA Perspective	Abstract
1.3	Will GaAs Survive for Wireless PA’s?	Abstract
1.4	Moving Past the Hype: Real Opportunities for Wide Bandgap Compound Semiconductors in RF Power Markets	Abstract
1.5	The Compound Semiconductor Technology Roadmap Embedded in the 2003 ITRS: Implications for the MANTecH Community	Abstract
1.6	What are the Prerequisites for Survival in The GaAs Industry	Abstract
2.1	Production Ready Ultra High Breakdown 6” pHEMT Technology	Abstract
2.2	0.15µm Power pHEMT Manufacturing Technology for Ka-and Q- Band MMIC Power Amplifiers	Abstract
2.3	High Frequency Power Metamorphic HEMT	Abstract
2.4	Development of L-band 28V Operation GaAs FET and Optimization for Mass Production	Abstract
2.5	Stepper Based Sub-0.25µm Process for mm-Wave Applications	Abstract
3.1	Outstanding Issues in Compound Semiconductor Reliability	Abstract
3.2	Reliability Assessment of Production of SiC MESFET’s	Abstract
3.3	Reliability Evaluation of InGaAsN for PA Handset Applications	Abstract
3.4	In-line RF Device Testing for Monitoring a High Volume GaAs HBT Production Line	Abstract
4.1	4-inch GaN HEMT Epi wafers with Less Wafer Bow	Abstract
4.2	Gate Leakage Current of AlGaN/GaN HEMT’s Device Influenced by Substrate Defects	Abstract
4.3	Manufacturing Engineering wafers for GaN RF Power Applications	Abstract
4.4	Investigation of Semi-Insulating SiC Wafers Using Contactless Topographic and Temperature-Dependent Resistivity Analysis	Abstract
4.5	Evaluation of 4” InP Substrates for Epi-Ready Production MBE Growth	Abstract
5.1	Cross-functional Optimization of Backside Metal Adhesion to GaAs	Abstract
5.2	A Simple Approach to Eliminate Occasional Grass Formation in ICP Backside Via Etch Process	Abstract
5.3	InP Backside Via Formation Using High Etch Rate and Low Temperature HI-Based ICP Etching	Abstract
5.4	Resistance and Inductance of Through-Wafer Vias: Models, Measurement, and Scaling	Abstract
5.5	Investigation of Reliability Failures and Process Improvements to a Source-Via Process	Abstract
6.1	LED Technology Trends	Abstract
6.2	A Review of Night Imaging Technologies – Innovations for the Visible to Long Wave Infrared Systems	Abstract
6.3	Yield Improvement of Wafer Mapping the Polarization Correction in InP/InGaAsP WDM Optical Power Monitors	Abstract
6.4	AlInGaN-based Deep Ultraviolet LED Technology	Abstract
7.1	Oxygen Plasma Damage Study on InGap/GaAs HBT	Abstract
7.2	Shallow Mesa Isolation of AlSb/InAs HEMT with AlGaSb Buffer Layer Using Inductively Coupled Plasma Etching	Abstract
7.3	High-Density ecR-Plasma Deposited Silicon Nitride Films for Applications in III/V-based Compound Semiconductor Devices	Abstract
7.4	Dense Silicon Nitride for MMIC Protection with Low Compressive Stress Grown in LF PecVD	Abstract
7.5	Reliability Characterization of High Density MIMCAP Nitride	Abstract
8.1	A Highly Uniform and Reliable AlGaN/GaN HEMT	Abstract
8.2	SiC MESFET and MMIC Technology Transition to Production	Abstract
8.3	25 Watt X-band GaN on Si MMIC	Abstract
8.4	Performance and Fabrication of GaN/AlGaN Power MMIC at 10 GHz	Abstract
9.1	Flip Chip Technology – Vendor Overview	Abstract
9.2	GaAs Integrated Passive Technology at Freescale Semiconductor, Inc	Abstract
9.3	A Novel Approach for Hermetic Wafer Scale MEMS RF and GaAs Packaging	Abstract
9.4	Handset Design Techniques at the Package and System Level	Abstract
11.1	Market Opportunities in the Age of Seamless Mobility	Abstract
11.2	InGaP HBT Technology Optimization for Next Generation High Performance Cellular Handset Power Amplifiers	Abstract
11.3	A super Ruggedness InGaP/GaAs HBT for GSM Power Amplifiers	Abstract
11.4	Process and Performance Improvements to Type-II GaAsSb/InP DHBT’s	Abstract
11.5	Thermally Optimized and Electrically Isolated Buffer Layer Study in High Volume HBT Manufacturing	Abstract
12.1	A High-Performance 0.13um AlGaAs/InGaAs pHEMT Process Using Sidewall Spacer Technology	Abstract
12.2	All i-Line Lift-Off T-Gate Process and Materials	Abstract
12.3	Low Energy Sputter Deposition and Properties of NiCr Thin film Resistors for GaAs Integrated Circuits	Abstract
12.4	Elimination of Defects Observed Following Patterned TiW-Au Metal Formation

1.3

2.1

2.2

2.3

2.4

3.1

3.2

3.3

3.4

4.1

4.2

4.3

4.4

5.1

5.2

5.3

5.4

5.5

6.1

6.2

6.3

6.4

7.1

7.2

7.3

7.4

7.5

8.1

8.2

8.3

8.4

9.1

9.2

9.3

9.4

11.1

11.2