Shallow Mesa Isolation of AlSb/InAs HEMT with AlGaSb Buffer Layer Using Inductively Coupled Plasma Etching

P. Nam, R. Tsai, M. Lange, W. Deal, J. Lee, C. Namba, P. Liu, R. Grundbacher, J. Wang, M. Barsky, A Gutierrez-Aitken and S. Olson
Northrop Grumman Space Technology,
Microelectronic Product Center, Redondo Beach, CA 90278
Tel: (310) 813-8820 Fax: (310) 812-9501 Email: peter.nam@ngc.com

A mesa isolation process of AlSb/InAs HEMT has been developed by using inductively coupled plasma etching. The etch rate is well controlled and the resulting mesa floor demonstrates a significant improvement in smoothness as compared to a wet-etch floor. Devices fabricated by this technique show a revolutionary RF performance of f_T=220 GHz and f_max=275 GHz at 170 mW/mm for a 0.1-µm gate.

Keywords: AlSb/InAs HEMT, AlGaSb buffer, mesa isolation, ICP etching

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