Reliability Evaluation of InGaAsN for PA
Handset Applications
Lanse
Rushing, Pete Zampardi and Mike Sun,
Skyworks Solutions, Inc.
2427 Hillcrest Drive, Newbury Park, CA
91320
Phone:
Roger
Welser
Kopin Corp.,
Phone:
An initial assessment of the reliability of InGaP/InGaAsN transistors was investigated in order to evaluate this new material system for cell phone applications. The investigation consisted of single temperature HTOL with a modest case temperature of 200oC, Vcc of 5.0V, and a current density of 25kA/cm2. InGaP/InGaAsN variants and InGaP/GaAs controls were stressed at the same time. The failure mode for both the InGaP/InGaAsN and InGaP/GaAs transistors was identified through IV characterization as Beta degradation due to an increase in Ib. All other device parameters are stable. The Beta degradation data was used to construct a probability plot. The InGap/InGaAsN transistors had greater or comparable reliability to the control population, thus indicating that this material has sufficient reliability for cell phone applications.
Keywords: InGaAsN, GAIN, HBT, Reliability