Production Ready Ultra High Breakdown 6” pHEMT Technology
Cheng-Guan Yuan, Y.Y. Hsieh, T.J. Yeh, Chung-Hsu Chen, D.W. Tu, Yu-Chi Wang, Joe Liu, Saad Murad#, Ramon Schook#, Frans Bontekoe#, and Mark Tomesen#
Win Semiconductors Corp. N 69 Technology 7th Rd., Hwaya Technology Park, Kuei Shan Hsiang, Tao Yuan Shien, Taiwan (333)
#Philips Semiconductors B.V. Gerstweg 2, 6534 AE. Nijmegen, The Netherlands
A production ready pseudomorphic high electron mobility transistor (pHEMT) with high breakdown voltage, improved 1/f noise, and linearity has been developed. This technology shows better than 35V breakdown voltage uniformly across 6-inch wafers. The high performance circuits are demonstrated with 0.5 µm pHEMT process. This PHEMT technology si ready for high volume production with low cost.