Device Zoo:  A Smart tool for Device Performance Optimization

A. Khramtsov1, M. Vazokha2, S. Solodky2, T. Baksht2, I. Ortenberg2, A. Stopel2, M. Leibovitch3, G. Bunin3, S. Hava1 and Yorma Shapira2

1 Department of ecE, Ben-Gurion University, Beer-Sheva 84150, Israel

2 Department of Electrical Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel

3 Gal-El (MMIC), P.O. Box 330, Ashdod 77102, Israel

Phone: 972-88572658, E-mail: mark1@is.elta.co.il

 

Keywords : high electron mobility transistor, empirical model, small signal parameters, layout, DoE

 

Abstract

GaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) and InAlAs/InGaAs metamorphic HEMTs (MHEMTs) have been used as modeling devices for investigation of the power of the statistical Design of Experiment (DoE) approach.  The Device Zoo presented here is based on the DoE approach and is shown to be an effective tool for adjusting the layout and epi-structure parameters of HEMTs for any system or application requirements.  This approach may also shorten time-to-market by selecting the optimal device.

 

Empirical models for the small signal parameters and threshold frequency have been developed and verified and will be presented as an application example of the Device Zoo.  Since the small signal performance parameters are sensitive to the HEMT lateral geometry, the models have been used for process variation control and definition of the layout parameters.  The Device Zoo approach emerges as a useful tool for correlating structural and performance parameters and for design optimization.

 

 

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