Gate Electrode Formation Process Optimization in a GaAs FET Device

Craig Carpenter, Chris Shepard, and Matt Stevenson

Skyworks Solutions, 20 Sylvan Rd., Woburn, Massachusetts, 01801

Tel: 781-376-3039 Email: craig.carpenter@skyworksinc.com

 

Keywords : Gate, CD, Resist, Liftoff, Solvent, Evaporator

 

Abstract

This paper will describe how a gate electrode formation process in a GaAs FET device was analyzed and optimized for increased CD control and product throughput.  Optimizations included a new resist in the photolithography process, a new solvent and equipment type in the metal liftoff process, and a new dome structure in the metal deposition process.  These process optimizations resulted in a gate electrode formation process with improved CD control, a liftoff process with increased throughput, and the elimination of liftoff reworks.

 

 

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