Contactless Electrical Characterization of HEMP Epitaxial Stgructures and Devices

S. Solodky¹, T. Baksht¹, A. Kramtsov², I. Ortenberg¹, M. Vazokha¹, M. Leibovitch³, A. Hava² and Yorman Shapira¹

¹ Department of Electrical Engineering – Physical Electronics, Tel-Aviv University, Ramat-Aviv 69978, Israel

Phone: 972-3-6408015, E-mail: sana@eng.tau.ac.il

² Dept. Of Electrical and Computer Engineering, Ben-Gurion University, Beer-Sheva

³ Gal-El (MMIC), P.O. Box 330, Ashdod 77102, Israel

Keywords: GaN HEMT, PHEMT, MHEMT, contactless characterization

Abstract

AlGaN/GaN HEMT, AlGaAs/InGAs/GaAs PHEMT and InAlAs/InGaAs MHEMT epitaxial structures have been characterized using surface photovoltage spectroscopy. The efforts of the transistor top and bottom delta-doping levels ?_top, ?_bot and surface charge Q_sur on the spectrum features have been studied using numerical simulations. Universal empirical model has been developed, which allows extraction and comparison of ? _top ? _bot and Q_sur and is applicable for both double-sided and single sided delta-doped structures. Effect of GaN HEMT surface passivation has been studied. Prediction of the final device performance by the model is shown for two MHEMT structures. Correlation between extracted Q_sur and device pinch-off voltage Vp is shown.

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