Balanced AlGaN/GaN-HFET amplifier based on 111-Silicon substrate

*M. Neuburger, **M. Kunze, **I. Daumiller, *T. Zimmermann, ***A. Dadgar, ***A. Krost, *S. Hettich, *F. Gruson, *H. Schumacher, *E. Kohn

 

* Department of Electron Devices * Circuits, University of Ulm, Albert Einstein Allee 45, 89081 Ulm, Germany

(email: Martin.Neuberger@e-technik.uni-ulm.de, phone: +49 731 502 6183)

** micro GaN GmbH, Albert Einstein Allee 45, 89081 Ulm, Germany

*** Department of Semiconductor Epitaxy, Otto-von-Guericke University of Magdeburg, 39016 Magdeburg, Germany

 

 

Abstract

In this work a modular low cost RF-amplifier system is presented, based on AlGaN/GaN-HFETs on 111-Si, hybrid integrated on PCB, consisting of single stage and balanced amplifier modules.  50 Ohm matching of the modules is realized with the use of commercial available SMD-components, allowing to cascade the individual modules.  Depending the setup of the system, either the total RF-output power or power gain is increased.  This concept results in more efficient heat sinking because of the resulting small transistor size in contrast to other concepts [1].  The concept and a special mounting technique allows to use low cost heat sinks like copper, keeping the total module cost down.  The RF-amplifier system is realized and tested at 2 GHz.  Presently the frequency range is extended to 5 GHz.

 

 

6.5 pdf             Return to TOC