An Over 100 W CW Output Power Amplifier Using AlGaN/GaN HEMTs

Toshiihide Kikkawa 1), Eizo Mitani2), Kazukiyo Joshin1), Shigeru Yokokawa3), Yasunori Tateno3)

1) Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakamiya, Atsugi, 243-0197, JAPAN

2) Fujitrsu Comp[ound Semiconduct, Inc. 2355 Zankler Road, San Jose, CA  95131, U.S.A.

3) Fujitsu Quantum Devices Ltd., 1000 Kamisukiahara, Nakakoma-gun, Yamanashi, 409-3883, JAPAN

E-mail: EMitani@fcsi.jufitsu.com, Phone: +1-408-232-9500

 

Keywords : GaN, HEMT, power amplifier, base station

 

Abstract

We describe high power 150 W CW output power 36-mm gate-pereiphery AlGaN/GaN HEMTs on a SiC substrate with a power added efficience (PAE) of 54% operated at 63 V drain bias voltage (Vds).  Vds dependence of third order-intermodulation (IM3) was also characterized at Vds up to 50 V.  Preliminary reliability was characterized using a RF power stress test.  A CE P3dB RF-power measurement at Vds of 60 V exhibited good reliability for 1000 h.

 

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