An Over 100 W CW Output Power Amplifier Using AlGaN/GaN HEMTs
Toshiihide Kikkawa 1), Eizo Mitani2), Kazukiyo Joshin1), Shigeru Yokokawa3), Yasunori Tateno3)
Fujitsu Laboratories Ltd. 10-1 Morinosato-Wakamiya, Atsugi, 243-0197,
Fujitrsu Comp[ound Semiconduct, Inc.
Fujitsu Quantum Devices Ltd., 1000 Kamisukiahara, Nakakoma-gun, Yamanashi,
E-mail: EMitani@fcsi.jufitsu.com, Phone: +1-408-232-9500
Keywords : GaN, HEMT, power amplifier, base station
We describe high power 150 W CW output power 36-mm gate-pereiphery AlGaN/GaN HEMTs on a SiC substrate with a power added efficience (PAE) of 54% operated at 63 V drain bias voltage (Vds). Vds dependence of third order-intermodulation (IM3) was also characterized at Vds up to 50 V. Preliminary reliability was characterized using a RF power stress test. A CE P3dB RF-power measurement at Vds of 60 V exhibited good reliability for 1000 h.