Manufacturable A1Sb/InAs HEMT Technology for Ultra-Low Power Millimeter-Wave Integrated Circuits

R. Tsai¹, R. Gundbacher¹, M. Lange¹, J.B. Boos², B.R. Bennett2, P. Nam1¹, L.J. Lee¹, M. Barsky¹, C. Namba¹, K. Padmanabhan¹, S. Sarkozy¹, P.H. Liu¹, and A. Gutierrez¹

¹Northrop Grumman Space Technology, Inc., Redondo Beach, CA 90278

Tel: (310) 812-8254, Fax: (310) 813-0418, Email: roger.tsai@ngc.com

²Naval Research Laboratory, Washington, DC 20375-5320, USA

Abstract

High electron mobility transistors with InAs channels and sub 0. 1 mm metal gates, have demonstrated a 100% improvement in low-power, high-speed figure of merits over conventional InAlAs/InGaAs lattice-matched HEMTs and MHEMTs. AlSb/InAs MHEMTs exhibit transconductances as high as 1.3 S/mm at drain biases as low as 0.3 V, while maintaining f_T and f_max results greater than 220 GHz and 270 GHz, respectively. In this paper, we will discuss our efforts to develop this technology for revolutionary low-power, high frequency MMIC applications.

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