Cost Effective T-Gate Process for PHEMT-based MMIC with Large Gate Periphery
B.Hadad2*, I. Toledo2, G. Bunin1, J. Kaplun1, M. leibovitch1, Shapira2, H. Knafo2
1Gal-El (MMIC), P.O.B. 330, Ashdod 77102, Israel, Tel. +972-8-8572739
*Corresponding autor email: firstname.lastname@example.org
of Physical Electronics, Faculty of Engineering,
Keywords: PHEMT, T-Gate, PMGI, trilayer resist, Ar+ ion beam treatment
One of the major yield killers of power-amplifier PHEMT-based MMICs is fabricating a T-shaped gate with gate periphery of several tens of mm. We have investigated a novel PMMA/PMGI/PMMA tri-layer resist scheme for T-Gate definition of PHEMTs with 0.25mm gate length and in-situ Ar+ ion beam treatment before gate evaporation as methods for eliminating this problem. We intend to extend this technology for devices with shorter gate length (Lg).