Transition of SiC MESFET Technology from Discrete Transistors to High Performance MMIC Technology

J.W. Milligan, J. Henning, S.T. Allen, A. Ward, P. Parikh, R.P. Smith, A. Saxler, Y. Wu and J. Palmour

Cree, Inc., 4600 Silicon Drive, Durham, NC 27703, (919) 313-5564, jmilligan@cree.com

Keywords: SiC, MESFET, MMIC, HPSI, HTOL, GaN

Abstract

Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manufactured on 3-inch high purity semi-insulating (HPSI) 4H-SiC substrates. MESFETs with a MTTF of over 200 hours when operated at a T_j=295^oC are presented. High power SiC MMIC amplifiers are shown with excellent yield and repeatability using a released foundry process. GaN HEMT operating life of over 500 hours at a T_j=160^o is shown. Finally, GaN HEMTs with 30 W/mm RF output power density are reported.

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