Walkout in PHEMTs: Origin and Relation to Device Structure

S. Solodky¹, T. Baksht¹, A. Kramtsov², M. Vazokha1, A. Stopel¹, I. Lusetsky¹, M.Leibovitch², G. Bunin² and Yorman Shapira¹

¹ Department of Electrical Engineering – Physical Electronics, Tel-Aviv University, Ramat-Aviv 69978, Israel

² Gal-El (MMIC), P.O. Box 330, Ashdod 77102, Israel

³ Engineering Faculty, Ben-Gurion University, Beer-Sheva, 84105, lIsrael

E-mail: baksht@post.tau.ac.il; Fax: 972-3-6423508 Phone: 972-3-6408015,

Keywords : HEMT, walkout, device design, impact ionization, empirical modeling

Abstract

Parameter walkout of more than 250 power Al_0.24Ga_0.76As/In_0.25Ga_0.75As/GaAs double-recessed PHEMTs with different layout geometry and epitaxial structure has been experimentally measured and simulated. The relation between DC, small-signal and large-signal behavior has been recognized. The essential parameters of walkout were defined; their geometry and structural dependence have been derived. Possible methods of walkout control are discussed.

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