Improvement of Wafer Bonding Processing HB-LED with Low-Temperature-Grown Compound Semiconductors as Adhesive Materials
K.L. Chang, J.H. Epple, G.W. Pickrell,a) K.Y. Cheng, and K.C. Hsieh b)
Department of Electrical and Computer Engineering, Micro
and Nanotechnology Laboratory,
a) Present address: OptiComp Corporation,
b)Electronic mail: email@example.com
Keywords: High-brightness LED, wafer bonding, material integration, amorphous compound semiconductors
A wafer bonding process using low-temperature-grown (LTG) compound semiconductor as the bonding agent has been demonstrated. The optical and electrical properties of bonded samples have been characterized. This method provides several advantages, including high optical transparent, orientation-free, and low bonding temperature, which are desirable for high-brightness LED applications.