Improvement of Wafer Bonding Processing HB-LED with Low-Temperature-Grown Compound Semiconductors as Adhesive Materials

K.L. Chang, J.H. Epple, G.W. Pickrell,a) K.Y. Cheng, and K.C. Hsieh b)

Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbvana-Champaign, Urbana, Illinois  61801 USA

a) Present address: OptiComp Corporation, P.O. Box 10779, Zephyr Cove, NV 89448

b)Electronic mail: khsieh@uiuc.edu

 

Keywords: High-brightness LED, wafer bonding, material integration, amorphous compound semiconductors

 

Abstract

A wafer bonding process using low-temperature-grown (LTG) compound semiconductor as the bonding agent has been demonstrated.  The optical and electrical properties of bonded samples have been characterized.  This method provides several advantages, including high optical transparent, orientation-free, and low bonding temperature, which are desirable for high-brightness LED applications.

 

 

10B.3pdf             Return to TOC