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The
International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the
Industry"
2003 On-line
Digest Table of Contents
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everything you need with our convenient
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| |
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| 1.1 |
The four
key development vectors for next-generation handset design
David
J. Aldrich,
Skyworks
Solutions Inc. |
Abstract |
|
1.2 |
A DARPA Perspective on the Future of
Electronics
John C. Zolper,
DARPA/MTO |
Abstract
|
1.3
|
GaAs
and SiGec BiCMOS
Cost Comparison – Is SiGec Always
Cheaper?
Mark Wilson, Motorola Semiconductor Products
Sector |
|
2.1
|
Advance
in Compound Semiconductor of China
Qi Huang and Junming Zhou, Institute of
Physics, Chinese Academy of Sciences, Advanced Chinese Epitaxy Ltd. |
|
2.2
|
RF Power
Amplifiers for Cellphones
C.E. Weitzel,
Motorola, Inc., Semiconductor Products Sector |
|
2.3
|
Ultra
Broadband MEMS Switch on Silicon and GaAs
Substrates
Richard Chan, Robert
Lesnick, David Caruth, and Milton
Feng, High Speed Integrated Circuits
Group, Department of Electrical and Computer Engineering, University
of Illinois |
|
2.4
|
Root
Cause Analysis and Reduction of Off-State Leakage Current to
Increase Manufacturability of a HIGFET Device
J.
Hughes, E. Huang, J. Apibunyopas, C.
Della-Morrow, T. Nilsson, M. Coe, Motorola Semiconductor Products
Sector |
|
3.1
|
Impact of
Substrate Imperfections on Epitaxial
Layer Quality
Michael Wojtowicz, Randy
Sandhu, Ben Heying,
and Thomas Block, Northrop Grumman Space Technology |
|
3.2
|
Use of Re-etched and Re-polished
Epi-wafers for MBE Calibration Substrates
J. Lowmaster, R. Pelzel, M. Dydyk, D. Green,
IQE, Inc., |
|
3.3
|
Commercial Production of Large Diameter InP-HBT Epiwafers by MBE
D. I.
Lubyshev, K. Teker, O. Malis, Y. Wu, J. M. Fastenau, X.-M. Fang, C.
Doss, A. B. Cornfeld, and W. K. Liu, IQE Inc., |
|
3.4
|
Volume
Epitaxial Growth of Enhanced Mode
HIGFETs using Minimal Material
Characterization and Rapid Inline Processing to Minimize Risk
Michael Pelczynski, Mark
Rittgers, Bob
Duffin, Celicia Della-Morrow,
Mikhail Mikhov*, Motorola Inc.
Semiconductor Product Sector |
|
|
3.5 |
Active Carbon Control
During VGF Growth of Semiinsulating
GaAs
T.
Bünger, J.
Stenzenberger, F. Börner, U.
Kretzer, S. Eichler,
M. Jurisch, R.
Bindemann, B. Weinert, S.
Teichert, T. Flade,
Freiberger
Compound Materials GmbH |
Abstract |
4.1
|
MIM’s
the Word – Capacitors for Fun and Profit
Martin
J. Brophy, Alfredo
Torrejon, Shawn Petersen, Kamal
Avala, and Li Liu,
TriQuint
Semiconductor |
|
4.2
|
On the
Development of High Density Nitrides for
MMICs
Y. C. Chou, R. Lai, G. P. Li , H.
Guan * , R. Grundbacher, P. Nam, H. K.
Kim, Y. Ra ** , M. Barsky, M.
Biedenbender, and A. Oki, Northrop
Grumman Space Technology |
|
4.3
|
Development and Characterization of a 600 Å PecVD Si3N4 High-Density
MIM Capacitor for InGaP/GaAs HBT
Applications
Jiro
Yota,
Ravi
Ramanathan, Jose
Arreaga, Peter Dai, Cristian
Cismaru, Richard Burton,
Parminder Bal,
Lance Rushing,
Skyworks
Solutions, Inc. |
|
4.4
|
Characteristics of Low-k Film Deposited by Plasma-Enhanced CVD Using
a Liquid BCB Source
Suehiro
Sugitani, Hideaki
Matsuzaki, and Takatomo
Enoki, NTT Photonics Laboratories,
NTT Corporation |
|
4.5
|
Metal
particle effects on thin film capacitors in high volume
manufacturing
Muralidhar R. Rao, Sheila T. O'Neil, Shiban
Tiku, Skyworks Solutions Inc., |
|
4.6
|
Backside
Emission Microscopy Applications In
Compound Semiconductor Manufacturing Debug
P. Sanders, H. Henry, D. Hill, M.
Sadaka, S. Wilson, Motorola
Semiconductor Products Sector |
|
5.1
|
Compact
System-on-Package (SOP) Architectures
for
low cost RF Front-end modules
J. Laskar, S.
Pinel, K. Lim, A.
Raghavan, R. Li, C-H. Lee, M. Maeng,
M.F. Davis, M. Tentzeris.,
School of ecE, Georgia Institute of
Technology |
|
5.2
|
Integrated circuits using embedded III-V-on-Ge MHEMTs in multi-layer
thin-film technology
R. Vandersmissen 1 , D. Schreurs 1 , S.
Vandenberghe 1 , G. Carchon, and G. Borghs 2, IMec, MCP, |
|
5.3
|
Wafer-Level Assembly of Heterogeneous Technologies
J.-Q. Lu, A. Jindal,
P.D. Persans, T.S.
Cale, and R.J. Gutmann,
Interconnect Focus Center: Interconnections for
Gigascale Integration, Rensselaer Polytechnic Institute |
|
5.4
|
Dense,
Two-Dimensional Optoelectronic Chips for High-Speed, Parallel
Optical Links
Doug J. Burrows, Kelly A. Zabierek, Richard R.
Dennis, Suzanne M. Wade, and Robert W. Cook, TeraConnect, Inc.,
|
|
5.5
|
Power
GaInP/GaAs HBTs
for High Voltage Operation
P. Kurpas, A.
Maaßdorf, W. Doser*,
W. Köhler, P.
Heymann, B. Janke, F.
Schnieder, H.
Blanck*, P. Auxemery**, D.
Pons**, W. Heinrich, J.
Würfl, Ferdinand-Braun-Institut
für
Höchstfrequenztechnik (FBH) |
|
6.1
|
Refractory Gate Metallization Characterization for HIGFET Power
Amplifiers
James Cotronakis,
Thomas Nilsson, Motorola Compound Semiconductor |
|
6.2
|
Fabrication and Characterization of Thin Film Resistors for
GaAs-Based
Power Amplifiers
Hong Shen, Jose
Arreaga,
Ravi
Ramanathan, Heather
Knoedler, John Sawyer, and Shiban
Tiku,
Skyworks
Solutions, Inc., |
|
6.3
|
NiGeAu
Ohmic Contact in
InGaP pHEMTs
Ellen Lan,
Qianghua Xie,
Peter Fejes, and Ha Le, Motorola Inc.,
Semiconductor Products Sector |
|
6.4
|
Advances
in Gold Metallization at Motorola's Compound Semiconductor Fab (CS1)
Chad M. Becker, William Rummel*, Dr. Paul
Ocansey, Motorola Compound Semiconductor |
|
6.5
|
The Study
of Dendrites Formation Mechanism to Enhance Gold Plating Process
Yield, Throughput, and Solution Lifetime
S.J. Huang, H.C. Chou, T.C. Lee, B. Lin, D.W.
Tu, P.C. Chao, and C.S. Wu, WIN
Semiconductors Corporation |
|
7.1
|
High
Voltage Microwave Devices: An Overview
D. Miller and M. Drinkwine, M/A-COM,
Inc. |
|
7.2
|
III-V
Compound Semiconductor Industry and Technology Development in Taiwan
Yung S. Liu,
Optoelectonics
& Systems Laboratories, Industrial Technology Research Institute |
|
7.3
|
High
Speed 0.18µm Ion-implanted GaAs MESFET
Process with High Uniformity & Excellent Reproducibility
D. Fukushi, M.
Watanabe and S. Nakajima, Optoelectronics R&D Laboratories, Sumitomo
Electric Ind., Ltd. |
|
7.4
|
Deterministic Process Control Using a Multivariate Model
D. Miller, M/A-COM, Inc. |
|
7.5
|
Trade-off
Relationship between Breakdown and Gate-Lag in Recessed-Gate
GaAs
FETs
Y. Mitani, D. Kasai and K.
Horio, Faculty of Systems Engineering,
Shibaura Institute of Technology |
|
8.1
|
Optimization of PHEMT for Microwave Power Applications
T. Baksht, S.
Solodky, A.
Khramtsov, * S. Hava * and
Yoram Shapira,
Faculty of Engineering,Tel
Aviv
University,Ramat
Aviv,69978,Israel; Engineering Faculty,Ben-Gurion
University of the
Negev,
Mark Leibovich
and Gregory Bunin Gal El (MMIC) |
|
8.2
|
The First
0.15um MHEMT 6”GaAs Foundry Service: Highly Reliable Process for 3 V
Drain Bias Operations
M. Chertouk, W. D.
Chang, C. G. Yuan, H. H. Chen, L. Lo, C. H. Chen, D. W.
Tu, J. Liu, N.
Draidia, P. C. Chao, WIN
Semiconductors Corp. |
|
8.3
|
High
Power Ka – Band PIN Diode Technology
B. Houli-Arbiv, G. Bunin, J. Kaplun, I.
Hallakoun, T. Boterashvili, Y. Knafo, A. Cohen-Nov, M. Leibovitch,
B. Revzin, Gal-El (MMIC)
|
|
8.4
|
Predictive Modeling of InGaP/GaAs HBT
Noise Parameters from DC and S-Parameter Data for Wireless Power
Amplifier Design
James Chingwei Li
1 , Peter J.
Zampardi 2 , and Van Pho 3,
Skyworks Solutions Inc., |
|
8.5
|
Phase
Formation in Gold-Tin Alloys Electroplated from a Non-cyanide Bath
Yahui Zhang and Douglas G. Ivey, Department of
Chemical and Materials Engineering, University of Alberta |
|
8.6
|
Cycle
Time Reduction During Electroplating of Through Wafer Vias For
Backside Metallization of III-V Semiconductor Circuits
Dennis Anderson, Heather Knoedler, Shiban Tiku,
Skyworks Solutions Inc., |
|
8.7
|
Properties, process control, and characterization of PecVD silicon
nitrides for
compound
semiconductor devices
Candi
S. Cook,1,2 Terry Daly,1 Ran Liu,1
Michael Canonico,1 Martha Erickson,1 Qianghua
Xie,1 Rich Gregory,1 and Stefan
Zollner 1
1 Motorola, Inc., 2 Arizona State University, Science and
Engineering of Materials Program |
|
8.8 | |
