Refractory Gate
Metallization Characterization for HIGFET Power Amplifiers
James Cotronakis,
Thomas Nilsson
Motorola Compound
Semiconductor One: CS-1
Phone: (480)
413-5964, FAX: (480) 413-5748, Email: james.cotronakis@motorola.com
Phone: (480)
413-3181, FAX: (480) 413-5748, Email: tknilsson@motorola.com
Keywords: TiWN, Stress,
Bulk Resistance, Chamber Conditioning, Off-State Leakage, DOE
Abstract
HIGFET or Enhancement Mode
Off-State Leakage (Ioff) unit probe specification was tightened significantly
in early 2002 for a wireless telephone platform, causing a need for additional
characterization of related process modules. Results of an effort to further characterize
the E-mode gate metallization process and its effects on Ioff are reported.
Effects of controlled process inputs and uncontrolled deposition system
parameters on key film and device electrical parameters, including Ioff, are
analyzed. Moreover, efforts to eliminate gate metal de-lamination are
presented. All these efforts resulted in a reduction in variation of up to 35%
(wafer-to-wafer) for several film and device electrical parameters.