Integrated
circuits using embedded III-V-on-Ge MHEMTs in multi-layer thin-film technology
R. Vandersmissen 1 ,
D. Schreurs 1 ,
IMec, MCP, Kapeldreef
75, B-3001 Leuven, BELGIUM 1 also with E.E. Dept. of K.U.Leuven, BELGIUM; 2
also with Physics Dept. of K.U.Leuven, BELGIUM
Phone: +32-16-288056, e-mail: vsmissen@imec.be
Keywords: MCM-D, Thin-Film
Transistor, Semi-Monolithic Integration, MHEMT
Abstract
In this paper a
demonstrator oscillator circuit integrated in a MCM-D on glass technology is
presented. The active device of the oscillator is a thin-film Ge (germanium)
-based MHEMT. The MHEMT is embedded in the bottom dielectric layer of the
MCM-D. The combination of passive MCM-D technology and MHEMTs on Ge allows for
efficient semi-monolithic integration of active devices and realisation of
(optoelectronic) MCMs with embedded passive and active components.