On the Development
of High Density Nitrides for MMICs
Y. C. Chou, R. Lai,
G. P. Li * , H. Guan * , R. Grundbacher, P. Nam, H. K. Kim ** , Y. Ra ** , M.
Barsky,
M. Biedenbender, and
A. Oki
Northrop Grumman
Space Technology,
Tel: (310) 812-3550, Fax: (310) 813-0418, Email: yeong-chang.chou@trw.com
* Department of Electrical Engineering and Computer Science, UC,
**
Keywords: High Density,
Inductively-Coupled Plasma, High Electron Mobility Transistor, Monolithic
Microwave Integrated Circuit
Abstract
We have developed a NH3
free high-density nitride process (high-density inductively-coupled plasma,
HD-IP-CVD) for GaAs HEMT MMIC manufacturing, including its use in devices
passivation and as dielectrics for MIMCAPs. We have explored the process
optimization in order to minimize the adverse effects of high-density nitrides
on the performance of devices and MMICs. This study suggests that the MMIC
performance be optimized at ICP source RF power of approximately 500 watts. On
the other hand, the ramp-up breakdown voltage of MIMCAPs of high-density
nitrides shows an improvement of approximately 50-70% over that of standard
PecVD. The result indicates that a better nitride quality of MIMCAPs can be
achieved with HD-ICP-CVD process.