Commercial
Production of Large Diameter InP-HBT Epiwafers by MBE
X.-M. Fang, C. Doss,
A. B. Cornfeld, and W. K. Liu
IQE Inc.,
Phone: 610-861-6930,
E-mail: aliu@iqep.com
Keywords: InP-HBT, MBE, 150
mm InP substrates, InP/GaAsSb HBT, MHBT
Abstract
InP-HBTs continue to
demonstrate excellent performance in high-speed applications. We present
epiwafer control and reproducibility of InP-HBT production on multi-wafer MBE
reactors for standard InP substrates up to 100 mm diameters. Next-generation products will also be
discussed, including growth of alternate GaAsSb-base structures, metamorphic
HBTs, and evaluation of recently available 150 mm InP