Root Cause
Analysis and Reduction of Off-State Leakage Current to Increase Manufacturability
of a HIGFET Device
J. Hughes, E. Huang,
J. Apibunyopas, C. Della-Morrow, T. Nilsson, M. Coe
Motorola
Semiconductor Products Sector
Compound
Semiconductor One: CS-1
Phone: 480-413-4834,
FAX: 480-413-5748, Email: Jeff.Hughes@Motorola.com
Keywords: RF MEMS, Switch,
Stiction, Reliability
Abstract
This paper will discuss the
analysis and reduction of off-state leakage current on an enhancement mode
hetero-structure insulated-gate FET device (EMODE). Due to the strict
requirements for RF enabled devices, Off-state Drain to Source leakage (IDSOFF)
was identified as a critical parameter during “the ramp phase” of this technology.
This paper will address containment actions to minimize off-state leakage, key
correlations of electrical parameters to off-state leakage, and
characterization and experimental results of process modules affecting leakage.