Ultra Broadband
MEMS Switch on Silicon and GaAs Substrates
Richard Chan, Robert
Lesnick, David Caruth, and Milton Feng
High Speed Integrated
Circuits Group
Department of
Electrical and Computer Engineering,
208 N. Wright,
e-mail:
rchan@hsic.micro.uiuc.edu
217-333-4048
Keywords: RF MEMS, Switch, Stiction, Reliability
Abstract
This paper reports on the
performance of highly reliable dc to 110GHz low-voltage millimeter wave MEMS
switches on GaAs and Si. The switch has demonstrated insertion loss less than
6dB and isolation better than 15dB up to 110GHz and a cold switching lifetime
greater than 6.9 ×10 9 cycles. The design and fabrication
methods used to achieve ultra broadband performance and high reliability are
presented.