A Non-Self
Aligned InP HBT Production Process
Mike Sun, Juntao Hu, Wu-Jing Ho, Gary Hu, Jiang Li, Vicki Weng, Wei-Ming
Xu,
June Nguyen, Chang-Hwang Hua and Ding Day
Alpha Industries, Inc., Sunnyvale Operations, 1230 Bordeaux Drive,
Sunnyvale, CA 94089
E-mail: msun@alphaind.com, Phone: (408)-734-9888
Abstract
An
InP DHBT process technology implementing developed and characterized in a high
volume 4-inch wafer production line. This HBT technology utilizes non-self
aligned emitter and base contacts, InP emitter, selective etch stop layers and
optimized base-collector junction grading profile for enhanced
manufacturability and performance. The availability of high quality and stable
InP-based commercial epitaxial materials has greatly shortened the process
development time. Our InP DHBTs exhibit very low knee voltage of 0.5V at 100
kA/cm 2 with peak ft= 160 GHz and peak fmax of 190GHz. A SPICE-like large
signal model is also discussed in this paper. Following the successful pattern
of its GaAs HBT counterpart, we believe a low cost, high yield and
manufacturable 4-inch InP HBT production will become a reality soon.