Manufacturable Commercial 4-inch InP HBT Device Technology

 

N. X. Nguyen, J. Fierro, G. Peng, A. Ly, and C. Nguyen

Global Communication Semiconductors, Inc.

23155 Kashiwa Court, Torrance, CA 90505

Email: nnguyen@gcsincorp.com; Phone: 1-310-530-7274 x166

 

Abstract

 

A manufacturable, reliable, and high performance InP Heterostructure Bipolar Transistors device technology (SHBT and DHBT) has been developed and being offered for commercial foundry services. These devices are ideal to provide a complete chipset for 40 Gb/s fiber optic communication (OC-768) as well as high performance power amplifiers for 3G wireless applications. A peak cutoff frequency, Ft, of over 200 GHz was obtained for non-self aligned 1X3 _ m 2 device. The devices were designed for high reliability by employing an Al-free (InP) emitter and a carbon-doped base. Excellent device yield and uniformity observed across the wafer clearly demonstrated the feasibility of this technology for MSI-level of integration required in MUX/DMUX communication circuits.

 

              

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