Performance of InP/InGaAs Heterojunction Bipolar Transistors For 40Gb/s OEIC Applications
Shyh-Chiang Shen 1 , David C. Caruth 1 , and Milton Feng 1,2
1 Xindium Technologies, Inc., Suite 304, 100 Trade Centre Drive,
Champaign, IL 61820
Tel: 217-355-7080 ext. 30; e-mail: sshen@xindium.com
2 Microelectronics Laboratory, Department of Electrical and Computer
Engineering,
University of Illinois at Urbana-Champaign, Urbana, IL 61801
Abstract
A high performance InP/InGaAs SHBT technology will be
presented. InP SHBT is advantageous in terms of low-cost monolithic integration
with photodiodes for high-speed optical receiver front-end applications. We
will demonstrate that, through optimized CAD geometries, the fabricated HBTs
showed uniform and improved device performance. Our best results show that an fT of over 160 GHz and fmax of greater than 250 GHz are
achieved on InP/InGaAs SHBTs with a collector thickness of 3000Å.