Process Development on 0.1-mm Gat E/D MESFETs with f_T and f_max> 100 GHz Using Direct Ion Implantation for Low Power IC Applications

Z. Tang, H. Hsia, D. Becher, D. Caruth, M. Feng
Microelectronics Laboratory, Department of Electrical and Computer Engineering
University of Illinois, Urbana, IL  61801

In this paper, the DC and RF characteristics of 0.12-mm gate E/D mode MESFETs have been presented.  An f_T of 109 GHz and fmax of 126 GHz was achieved on E-mode MESFET and f_T of  105 GHz and fmax of 141 GHz on D-mode MESFET.  This is the first reported E-mode GaAs MESFET  using direct ion-implantation for f_T over 100 GHz.