P A P E R    T I T L E
A Study on PtGeAu Thin Ohmic Contact for GaAs PHEMT

A U T H O R  /  C R E D I T S
H.Y. CHA, S.W. PAEK, J.H. LEE, K.W.CHUNG*, and K.S. SEO
School of E.E. in Seoul Nat'l Univ.
*LG Corporate Institute of Technology

A B S T R A C T
We studied and optimized PtGeAu ohmic metal system for GaAs PHEMT. For Pt/Ge/Au=200/400/800Å, the minimum contact resistance was 0.125W-mm after alloying at 450°C for 20sec. PtGeAu ohmic metal system was found to be superior to conventional NiGeAu ohmic contact in terms of contact resistance, thermal reliability as well as surface morphology.