Model Development for Image Reversal Resist Lithography

The International Conference on
Compound Semiconductor Manufacturing Technology

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P A P E R T I T L E

Model Development for Image Reversal Resist Lithography

A U T H O R / C R E D I T S

Charles Feng, Ben Keppeler, Jerry Wang, and Alice Fischer-Colbrie
Microwave Technology Division, Hewlett-Packard Company
Santa Rosa, California

A B S T R A C T

The variation due to batch-to-batch inconsistency and aging can be a major process control issue for image reversal resist. We experimentally found that the dose-to-activate and the develop-to-clear time can be used to characterize both the batch-to-batch variation and resist aging. Using simplifying assumptions, we have developed a new mathematical model that correlates both resist linewidth and undercut with basic resist characteristics and processing conditions. This model greatly simplifies the resist qualification process and saves engineering time.

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