Solution to the E-beam Gate Resist Blistering Problem of 0.15 micron PHEMTs
A U T H O R / C R E D I T S
Y.C. Pao, K. Tran, C. Shih, N. Hardy
Filtronic Solid State, Inc., 3251 Olcott Street, Santa Clara, CA 95054
A B S T R A C T
In this paper we report a simple solution to the E-beam gate resist blistering problem encountered during the Ti/Pt/Au metallization. This has been one of the major yield concerns when manufacturing quarter micron or sub quarter micron PHEMTs. A free space screening method has been successfully used to eliminate the PMMA based E-beam resist blisters during the gate metal deposition process.