Process Simulation and Fabrication of Power Heterojunction Bipolar Transistors
A U T H O R / C R E D I T S
C.H. Fields and D. Choudhury
HRL Laboratories, LLC., Microelectronics Laboratory,
3011 Malibu Canyon Rd., Malibu, CA 90265, USA
Phone: 310-317-5706, e-mail: email@example.com
A B S T R A C T
Heterojunction Bipolar Transistors (HBTs) are considered excellent candidates for low phase noise millimeter wave applications. They exhibit outstanding high frequency performance and also low baseband noise compared to MESFET and HEMT devices. We have designed and demonstrated state-of-the art microwave and millimeter wave power HBTs using the baseline HBT process at HRL Laboratories. An HBT that is capable of delivering hundreds of mW of power across a broad frequency range has been developed. This paper presents process simulation and preliminary results on the fabricated multifinger power HBT devices.