MBE Production of HEMT Material for Commercial Applications

The International Conference on
Compound Semiconductor Manufacturing Technology

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P A P E R T I T L E

MBE Production of HEMT Material for Commercial Applications

A U T H O R / C R E D I T S

Michael Wojtowicz, Thomas Block, Richard Lai, Michael Barsky, An-Chich Han, and Dwight Streit TRW Electronics and Technology Division
One Space Park, R6/2573, Redondo Beach, CA 90278

A B S T R A C T

We report here the material monitoring aspects of TRW's high yield, high volume molecular beam epitaxy process. The uniformity, reproducibility, and reliability of MBE grown HEMT material have enabled the development of this commercial HEMT production line. Only a small set of all the possible epitaxial layer properties cause the majority of our device performance variations. They are channel width, channel In composition, Al barrier layer composition, and starting substrate. We will discuss how these parameters affect HEMT device performance and how they are monitored.

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