Material and Processing Technology for Manufacturing of High Speed, High Reliability GaInP/GaAs HBT based IC's
A U T H O R / C R E D I T S
Department of EECS, The University of Michigan
1301 Beal Ave. Ann Arbor, MI48109-2122
*Thomson-CSF, Central Research Laboratory
Domaine de Corbeville, 91404 Orsay, France
A B S T R A C T
High quality material and processing technology is reported for high speed and high reliability GaInP/GaAs HBTs. GaInP/GaAs HBT materials grown by CBE with non-toxic precursors showed low defect densities and acceptable mobility characteristics for high speed device applications. To reduce the base-collector capacitance (CBC), all wet-based, simple Lateral Etching Undercut (LEU) technology was applied. The 20% reduction of CBC using LEU technology resulted in 25% improvement of maximum oscillation frequency (fmax=100GHz). Reliabil-ity tests of passivated GaInP/GaAs HBTs with PECVD SiO2 showed ~2% current gain degradation over a period of 800hrs under high current density (40KA/cm2) stress condition. Finally, a transimpedance amplifier having a S21 gain of 12dB with a bandwidth of 19GHz was fabricated using the reported technology.