P A P E R    T I T L E
Hydrogen-related Issues in GaAs Schottky Contacts

A U T H O R  /  C R E D I T S
Department of Electrical Engineering, Tokyo Metropolitan University
1-1, Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
Phone: +81-426-77-2760, e-mail: okumura@eei.metro-u.ac.jp

A B S T R A C T
The characteristics of GaAs Schottky diodes have been discussed in relation to hydrogen-related issues. The surface subjected to atomic hydrogen would be covered with Ga droplets, and the Schottky contacts fabricated on such a surface becomes inhomo-geneous. In plasma processing with hydrogen and/or hydride gases, the induced near-surface defects provide positive charges (donor-type defects) regardless of the substrate conductivity type, and significantly modify the effective Schottky barrier height. The estimated built-in-voltage would become larger than the real one due to hydrogen passivation of dopants, and hence the relationship of SBH C-V > SBH I-V is observed.