A Two Step Polyimide Etchback for Integration of Heterojunction Bipolar Transistors and Resonant Tunneling Diodes

The International Conference on
Compound Semiconductor Manufacturing Technology

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P A P E R T I T L E

A Two Step Polyimide Etchback for Integration of Heterojunction Bipolar Transistors and Resonant Tunneling Diodes

A U T H O R / C R E D I T S

S. Thomas III, K. Kiziloglu, C. H. Fields, D. Chow, and A. Arthur
HRL Laboratories, LLC
3011 Malibu Canyon Rd. Malibu, CA 90265
Phone: (310) 317-5646 Email: sthomas@HRL.com

A B S T R A C T

A process is reported on for integration of resonant tunneling diodes (RTDs) and heterojunction bipolar transistors (HBTs.) Single stacked layer growth, etch stop layers, in situ sensors, and simulation have been used to improve and ensure the manufacturability of the process. Only minor modifications to the existing HBT process were required to incorporate the RTDs.

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